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TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA 300V POWER MOS 7 IGBT (R) TO-220 The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. D2PAK G C C E G E * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient * SSOA rated G C All Ratings: TC = 25C unless otherwise specified. APT26GU30K_SA UNIT E 300 20 30 47 26 85 85A @ 300V 187 -55 to 150 300 Watts C Amps Volts Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 @ TC = 150C Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT 300 3 4.5 1.5 1.5 250 A nA 4-2004 050-7466 Rev B 6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 2500 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT26GU30K_SA Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 13A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 300V Inductive Switching (25C) VCC = 200V VGE = 15V I C = 13A 4 5 MIN TYP MAX UNIT pF V nC A 1200 120 6 7.0 37 8 10 85 11 14 60 55 TBD 48 60 11 14 70 100 TBD 80 95 MIN TYP MAX UNIT C/W gm ns ns Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight 4 5 R G = 20 TJ = +25C Turn-on Switching Energy (Diode) 6 J Inductive Switching (125C) VCC = 200V VGE = 15V I C = 13A R G = 20 TJ = +125C Turn-on Switching Energy (Diode) 6 J THERMAL AND MECHANICAL CHARACTERISTICS 0.67 N/A 1.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7466 Rev B 4-2004 TYPICAL PERFORMANCE CURVES 60 50 40 TC = -55C 30 TC = 125C 20 TC = 25C 10 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 60 50 40 30 20 10 0 APT26GU30K_SA VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TC=-55C TC=25C TC=125C 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST <0.5 % DUTY CYCLE 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC = 13A TJ = 25C FIGURE 1, Output Characteristics(VGE = 15V) 100 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 GATE CHARGE (nC) FIGURE 4, Gate Charge 35 40 VCE = 240V IC, COLLECTOR CURRENT (A) 80 VCE = 60V VCE = 150V 60 TJ = -55C TJ = 25C TJ = 125C 40 20 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3 2.5 2 1.5 1 0.5 0 IC = 26A 2.5 IC = 26A 2.0 IC = 13A 1.5 IC = 6.5A IC = 13A IC = 6.5A 1.0 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 6 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 70 0 -50 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.05 IC, DC COLLECTOR CURRENT(A) 60 50 40 30 20 10 0 -50 4-2004 050-7466 Rev B 1.00 0.95 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 14 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 80 70 60 APT26GU30K_SA VGE =15V,TJ=125C 12 10 8 6 4 2 0 VCE = 400V TJ = 25C, TJ =125C RG = 20 L = 100 H VGE= 15V VGE =15V,TJ=25C 50 40 30 20 10 0 VCE = 200V RG = 20 L = 100 H 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 25 tr, RISE TIME (ns) tf, FALL TIME (ns) 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 RG = 20, L = 100H, VCE = 200V 100 80 60 40 20 TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V 20 15 10 5 0 RG = 20, L = 100H, VCE = 200V TJ = 25 or 125C,VGE = 15V 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 250 EON2, TURN ON ENERGY LOSS (J) VCE = 200V VGE = +15V RG = 20 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 250 EOFF, TURN OFF ENERGY LOSS (J) VCE = 200V VGE = +15V RG = 20 0 200 TJ = 125C,VGE =15V 200 TJ = 125C, VGE = 15V 150 150 100 100 50 TJ = 25C,VGE =15V 50 TJ = 25C, VGE = 15V 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 300 SWITCHING ENERGY LOSSES (J) VCE = 200V VGE = +15V TJ = 125C 0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 250 SWITCHING ENERGY LOSSES (J) VCE = 200V VGE = +15V RG = 20 0 Eoff, 26A 250 200 150 100 50 0 200 Eoff,26A Eon2, 26A 150 Eon2,26A Eoff, 13A Eon2, 13A Eon2, 6.5A 0 100 Eoff, 13A 50 Eoff, 6.5A Eon2,6.5A 0 0 Eon2,13A 4-2004 Eoff, 6.5A Rev B 050-7466 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 2,000 1,000 500 C, CAPACITANCE ( F) P 100 Cies 80 Coes IC, COLLECTOR CURRENT (A) APT26GU30K_SA 100 50 60 40 10 Cres 20 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 0.9 1 0 50 100 150 200 250 300 350 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0 ZJC, THERMAL IMPEDANCE (C/W) 0.7 Note: PDM t1 t2 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL 300 FMAX, OPERATING FREQUENCY (kHz) Junction temp (C) 0.192 0.00537F 100 Power (watts) 0.391 0.0342F Fmax = min(f max1 , f max 2 ) 50 f max1 = TJ = 125C TC = 75C D = 50 % VCE = 200V RG = 20 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off 0.0860 Case temperature(C) 0.432F f max 2 = Pdiss = FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 10 15 20 25 30 35 40 45 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10 5 TJ - TC R JC 050-7466 Rev B 4-2004 APT26GU30K_SA APT15DS30 10% td(on) Gate Voltage TJ = 125C V CC IC V CE tr Drain Current 90% A D.U.T. 5% Switching Energy 10% 5% DrainVoltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage td(off) DrainVoltage tf 90% 10% Switching Energy A V CE 100uH IC V CLAMP B 0 Drain Current A DRIVER* D.U.T. Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit TO-220AC Package Outline 1.39 (.055) 0.51 (.020) TO-263 (D2) Surface mount Package Outline Collector (Heat Sink) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) Drain 4.45 (.175) 4.57 (.180) 1.27 (.050) 1.32 (.052) 10.06 (.396) 10.31 (.406) 1.40 (.055) 1.65 (.065) 7.54 (.297) 7.68 (.303) 12.192 (.480) 9.912 (.390) 3.42 (.135) 2.54 (.100) 4.08 (.161) Dia. 3.54 (.139) 0.050 (.002) 3.683 (.145) MAX. 8.51 (.335) 8.76 (.345) 6.02 (.237) 6.17 (.243) 0.330 (.013) 0.432 (.017) 0.000 (.000) 0.254 (.010) 2.62 (.103) 2.72 (.107) 1.22 (.048) 1.32 (.052) {3 Plcs.} 0.762 (.030) 0.864 (.034) {2 Plcs.} 2.54 (.100) BSC {2 Plcs.} 3.68 (.145) 6.27 (.247) (Base of Lead) 4-2004 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) 14.73 (.580) 12.70 (.500) Gate Collector Emitter 1.77 (.070) 3-Plcs. 1.15 (.045) 1.01 (.040) 3-Plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) Heat Sink (Collector) and Leads are Plated Rev B Emitter Collector Gate Dimensions in Millimeters (Inches) 050-7466 Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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